Temperature dependence of resistivity and Hall coefficient in strongly disordered NbN thin films
We report the temperature dependence of resistivity (ρ) and Hall coefficient (RH) in the normal state of homogeneously disordered epitaxial NbN thin films with kF l∼1.68-10.12. The superconducting transition temperature (Tc) of these films varies from 2.7 to 16.8 K. While our least disordered film displays usual metallic behavior, for all the films with kF l≤8.13, both dρ dT and d RH dT are negative up to 285 K. We observe that RH (T) varies linearly with ρ (T) for all the films and [RH (T) - RH (285K) RH (285K)] =γ [ρ (T) -ρ (285 K) ρ (285 K)], where γ=0.68±0. 11. Measurements performed on a 2-nm-thick Be film show similar behavior with γ=0.69. This behavior is inconsistent with existing theories of localization and e-e interactions in a disordered metal. © 2009 The American Physical Society.
Publication Source (Journal or Book title)
Physical Review B - Condensed Matter and Materials Physics
Chand, M., Mishra, A., Xiong, Y., Kamlapure, A., Chockalingam, S., Jesudasan, J., Bagwe, V., Mondal, M., Adams, P., Tripathi, V., & Raychaudhuri, P. (2009). Temperature dependence of resistivity and Hall coefficient in strongly disordered NbN thin films. Physical Review B - Condensed Matter and Materials Physics, 80 (13) https://doi.org/10.1103/PhysRevB.80.134514