We report the temperature dependence of resistivity (ρ) and Hall coefficient (RH) in the normal state of homogeneously disordered epitaxial NbN thin films with kF l∼1.68-10.12. The superconducting transition temperature (Tc) of these films varies from 2.7 to 16.8 K. While our least disordered film displays usual metallic behavior, for all the films with kF l≤8.13, both dρ dT and d RH dT are negative up to 285 K. We observe that RH (T) varies linearly with ρ (T) for all the films and [RH (T) - RH (285K) RH (285K)] =γ [ρ (T) -ρ (285 K) ρ (285 K)], where γ=0.68±0. 11. Measurements performed on a 2-nm-thick Be film show similar behavior with γ=0.69. This behavior is inconsistent with existing theories of localization and e-e interactions in a disordered metal. © 2009 The American Physical Society.
Publication Source (Journal or Book title)
Physical Review B - Condensed Matter and Materials Physics
Chand, M., Mishra, A., Xiong, Y., Kamlapure, A., Chockalingam, S., Jesudasan, J., Bagwe, V., Mondal, M., Adams, P., Tripathi, V., & Raychaudhuri, P. (2009). Temperature dependence of resistivity and Hall coefficient in strongly disordered NbN thin films. Physical Review B - Condensed Matter and Materials Physics, 80 (13) https://doi.org/10.1103/PhysRevB.80.134514