Exchange field-mediated magnetoresistance in the correlated insulator phase of be films
We present a study of the proximity effect between a ferromagnet and a paramagnetic metal of varying disorder. Thin beryllium films are deposited onto a 5nm thick layer of the ferromagnetic insulator EuS. This bilayer arrangement induces an exchange field, H ex, of a few tesla in low-resistance Be films with sheet resistance RR Q, where R Q=h/e2 is the quantum resistance. We show that H ex survives in very high-resistance films and, in fact, appears to be relatively insensitive to the Be disorder. We exploit this fact to produce a giant low-field magnetoresistance in the correlated-insulator phase of Be films with RR Q. © 2012 American Physical Society.
Publication Source (Journal or Book title)
Physical Review Letters
Liu, T., Prestigiacomo, J., Xiong, Y., & Adams, P. (2012). Exchange field-mediated magnetoresistance in the correlated insulator phase of be films. Physical Review Letters, 109 (14) https://doi.org/10.1103/PhysRevLett.109.147207