Electrostatic tuning of the proximity-induced exchange field in EuS/Al bilayers
We demonstrate that the proximity-induced exchange field Hex in ferromagnetic-paramagnetic bilayers can be modulated with an electric field. An electrostatic gate arrangement is used to tune the magnitude of Hex in the Al component of EuS/Al bilayers. In samples with Hex∼2 T, we were able to produce modulations of ±10 mT with the application of perpendicular electric fields of the order of ±106 V/cm. We discuss several possible mechanisms accounting for the electric field's influence on the interfacial coupling between the Al layer and the ferromagnetic insulator EuS, along with the prospects of producing a superconducting field-effect transistor. © 2013 American Physical Society.
Publication Source (Journal or Book title)
Physical Review Letters
Liu, T., Prestigiacomo, J., & Adams, P. (2013). Electrostatic tuning of the proximity-induced exchange field in EuS/Al bilayers. Physical Review Letters, 111 (2) https://doi.org/10.1103/PhysRevLett.111.027207