Excitation energy dependence of S L2,3 X-ray fluorescent emission of BaNiS2 near the S 2p threshold
The results of measurements of S L2,3 X-ray fluorescent spectra of BaNiS2 near the S 2p threshold using tunable synchrotron radiation are presented. They are computed with FLAPW band structure calculations of BaNiS2 The excitation energy dependence of the SL2,3 spectra is found in the range of 163.5-173.5 eV which is attributed to excitation of inequivalent sulphur atoms (S(1) apical and S(2) in-plane sites). It allowed us to map separately the distribution of the S(2) and S(1)+S(2) 3s3d-partial density of states (DOS) in the valence band. We conclude that S 3d states participate in chemical bonding and hybridize with Ni 3d states. © 1997 Elsevier Science B.V.
Publication Source (Journal or Book title)
Physics Letters, Section A: General, Atomic and Solid State Physics
Kurmaev, E., Stadler, S., Ederer, D., Hase, I., Yarmoshenko, Y., Neumann, M., Zatsepin, D., Fujimori, A., Sato, M., Perera, R., Grush, M., & Callcott, T. (1997). Excitation energy dependence of S L2,3 X-ray fluorescent emission of BaNiS2 near the S 2p threshold. Physics Letters, Section A: General, Atomic and Solid State Physics, 235 (2), 191-194. https://doi.org/10.1016/S0375-9601(97)00565-3