Effects of boron impurities on the atomic bonding and electronic structure of Ni3Al

Authors

R. P. Winarski, Tulane University
T. Eskildsen, Tulane University
S. Stadler, Tulane University
J. Van Ek, Tulane University
D. L. Ederer, Tulane University
E. Z. Kurmaev, M.N. Mikheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences
M. M. Grush, The University of Tennessee, Knoxville
T. A. Callcott, The University of Tennessee, Knoxville
A. Moewes, Louisiana State University
M. Lee, Tulane University

Document Type

Article

Publication Date

1-1-2000

Abstract

Tunable synchrotron radiation was used to examine the boron K-valence emission from boron doped Ni3Al (500 parts per million boron). When compared with electronic structure calculations these measurements yield information regarding the local bonding environment of the doped boron atoms within the alloy structure. Our measurements appear to suggest that the boron atoms preferentially bond with the nickel atoms in this material. It seems that the boron atoms prefer to occupy octahedral interstitial sites surrounded by six nickel atoms. This suggests that the enhancement in ductility observed in this alloy is due to the interplanar metallic bonding provided by the doped boron atoms.

Publication Source (Journal or Book title)

Journal of Electron Spectroscopy and Related Phenomena

First Page

69

Last Page

74

Recommended Citation

Winarski, R., Eskildsen, T., Stadler, S., Van Ek, J., Ederer, D., Kurmaev, E., Grush, M., Callcott, T., Moewes, A., & Lee, M. (2000). Effects of boron impurities on the atomic bonding and electronic structure of Ni3Al. Journal of Electron Spectroscopy and Related Phenomena, 110, 69-74. https://doi.org/10.1016/S0368-2048(00)00157-2