Document Type
Article
Publication Date
4-27-2009
Abstract
Heusler alloy Co2 MnSn1-x Sbx (x=0.0, 0.5, and 1.0) thin films were grown on GaAs (001) substrates using pulsed laser deposition techniques. Growth parameters have been determined that result in highly magnetically anisotropic, crystalline, and oriented (001) films. The angular dependences, relative to the GaAs (001) crystallographic directions, of the coercive field Hc (θ) and the remanence Mr (θ) were determined from angle dependent magneto-optic Kerr effect (MOKE) measurements. It was found that Hc (θ) revealed higher order symmetry contributions to the magnetic anisotropy than did Mr (θ). The Fourier analysis of rotational MOKE data was used to determine the symmetry contributions to the total anisotropy. © 2009 American Institute of Physics.
Publication Source (Journal or Book title)
Journal of Applied Physics
Recommended Citation
Paudel, M., Wolfe, C., Patton, H., Simonson, J., Dubenko, I., Ali, N., & Stadler, S. (2009). Magnetic anisotropy of Co2 MnSn1-x Sbx thin films grown on GaAs (001). Journal of Applied Physics, 105 (7) https://doi.org/10.1063/1.3068530