Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small bandgap (Eg 0.2 eV), a carrier density of ∼1018 cm-3, and a large n-type Seebeck coefficient (S ∼ - 400 V/K) at room temperature. Hall effect measurements indicate that chemical doping significantly increases the carrier density, resulting in a metallic state, while the Seebeck coefficient still remains fairly large (∼- 150 μV/K). The largest power factor (S 2/p= 62 μW/m K2) was observed for Fe 0.99Co0.01(Ga0.997Ge0.003) 3, and its corresponding figure of merit (ZT= 1.3 ×10 -2) at 390 K improved by over a factor of 5 from the pure material. © 2011 American Institute of Physics.
Publication Source (Journal or Book title)
Journal of Applied Physics
Haldolaarachchige, N., Karki, A., Phelan, W., Xiong, Y., Jin, R., Chan, J., Stadler, S., & Young, D. (2011). Effect of chemical doping on the thermoelectric properties of FeGa 3. Journal of Applied Physics, 109 (10) https://doi.org/10.1063/1.3585843