Reactive epitaxy of beryllium in Si(1 1 1)-(7 × 7)
Scanning tunneling microscopy (STM) and photoelectron spectroscopy (PES) have been used to investigate the nucleation, growth, and structure of beryllium on Si(1 1 1)-(7 × 7). STM indicates that a chemical reaction occurs at temperatures as low as 120 K, resulting in a nano-clustered morphology, presumed to be composed of a beryllium silicide compound. Upon annealing to higher temperatures, PES data indicate that beryllium diffuses into the selvage region. High temperature annealing (∼1175 K) results in the formation of a universal ring cluster structure suggesting a Be-Si bond length less than 2.5 Å, in agreement with previous calculations regarding hypothetical Be2Si. © 2002 Elsevier Science B.V. All rights reserved.
Publication Source (Journal or Book title)
Chemical Physics Letters
Hite, D., Tang, S., & Sprunger, P. (2003). Reactive epitaxy of beryllium in Si(1 1 1)-(7 × 7). Chemical Physics Letters, 367 (1-2), 129-135. https://doi.org/10.1016/S0009-2614(02)01637-8