Faraday rotation in the Appel-Overhauser model for inversion-layer electrons in Si. II
We have previously calculated Faraday rotation in metal-oxide semiconductor surface space-charge layers, with the use of the Appel-Overhauser model. Here we extend this work to study the dependence of the rotation on the electron-electron collision time e. Results for the Drude model are also presented. © 1982 The American Physical Society.
Publication Source (Journal or Book title)
Physical Review B
O'Connell, R., & Wallace, G. (1982). Faraday rotation in the Appel-Overhauser model for inversion-layer electrons in Si. II. Physical Review B, 25 (8), 5527-5529. https://doi.org/10.1103/PhysRevB.25.5527