Title

Faraday rotation in the Appel-Overhauser model for inversion-layer electrons in Si. II

Document Type

Article

Publication Date

1-1-1982

Abstract

We have previously calculated Faraday rotation in metal-oxide semiconductor surface space-charge layers, with the use of the Appel-Overhauser model. Here we extend this work to study the dependence of the rotation on the electron-electron collision time e. Results for the Drude model are also presented. © 1982 The American Physical Society.

Publication Source (Journal or Book title)

Physical Review B

First Page

5527

Last Page

5529

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