Memory-function approach to ellipticity and Faraday rotation in a metal-oxide-semiconductor system
We use the memory-function approach to calculate the ellipticity and Faraday rotation due to the two-dimensional electron gas at the oxide-semiconductor interface of a metal-oxide-semiconductor system. Experimentally determined memory-function values of Allen et al., as a function of the photon frequency, are used in our analysis. For the corresponding results with varying external magnetic field B we have used the theoretical results of Ting et al. for the memory function. Comparison is also made with the recently reported experimental results of Piller and Wagner. © 1983 The American Physical Society.
Publication Source (Journal or Book title)
Physical Review B
O'Connell, R., & Wallace, G. (1983). Memory-function approach to ellipticity and Faraday rotation in a metal-oxide-semiconductor system. Physical Review B, 28 (8), 4643-4646. https://doi.org/10.1103/PhysRevB.28.4643