Title

Theoretical determination of the admittance of the metal gate in a metal-oxide-semiconductor system and effect of the gate on Faraday rotation and ellipticity

Document Type

Article

Publication Date

1-1-1985

Abstract

We calculate the admittance of the metal gate in a metal-oxide-semiconductor system in the Faraday geometry using the Boltzmann transport equation. We find that the value of the admittance calculated from this model agrees well with experimentally determined values. Using this calculated value of the admittance, we find that the contribution of the metal gate to the Faraday rotation and ellipticity to be negligible and hence we may ignore the metal gate altogether except for its contribution as a reflecting surface. © 1985.

Publication Source (Journal or Book title)

Physica B+C

First Page

145

Last Page

152

This document is currently not available here.

Share

COinS