Title

Effect of a finite oxide layer on the Faraday rotation and ellipticity in a metal-oxide-semiconductor system

Document Type

Article

Publication Date

1-1-1985

Abstract

We study the effect of a finite oxide layer on the Faraday rotation and ellipticity in a metal-oxide-semiconductor system. We find that the multiple internal reflections within the oxide layer can give an enhancement on the order of 21% over the case where the oxide layer is considered semi-infinite. At high magnetic fields, there is serious disagreement between theory and experiment. © 1985 The American Physical Society.

Publication Source (Journal or Book title)

Physical Review B

First Page

5208

Last Page

5211

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