The memory function for cyclotron resonance in the two dimensional electron gas
A divergence-free and explicit way for evaluating the memory function in the cyclotron resonance for the two dimensional electron gas is presented. The usual divergence of the free electron polarization function in cyclotron resonance is removed automatically by including the fluctuation effects of the center of mass. The general behavior of the memory function and its dependence on the magnetic field, electron density, transport time and temperature are studied in the strong magnetic field and low temperature limit. Our theory gives an understanding of the peak splitting phenomenon, and gives a very good fit for many heretofore unexplained cyclotron resonance experiments in Si(001)-MOS systems when the electron density is between 2x1011cm-2 to 8 x 1011cm-2. © 1988.
Publication Source (Journal or Book title)
Solid State Communications
Hu, G., & O'Connell, R. (1988). The memory function for cyclotron resonance in the two dimensional electron gas. Solid State Communications, 68 (1), 33-37. https://doi.org/10.1016/0038-1098(88)90239-6