Hysteretic voltage gap of a multijunction trap
The hysteretic voltage gap Δ(Formula presented), the difference between the threshold voltages for electrons to tunnel into and escape from a single-electron trap (which consists of N gated small junctions with equal junction capacitances C, equal stray capacitances (Formula presented), and well capacitance (Formula presented)) through an m-junction cotunneling process, is studied. By using an exact solution of the potential profiles [Phys. Rev. Lett. 74, 1839 (1995)], we find that Δ(Formula presented) has a strong dependence on m, (Formula presented)/C, (Formula presented)/C, and N, and that the hysteresis loop does not exist beyond a critical value β of (Formula presented)/C. Previous discussions in the literature have neglected the effect of the stray capacitances but we find that even comparatively small values have a large effect (especially for small (Formula presented) and large N) and, in particular, their inclusion was necessary to explain the ΔV obtained in some recent experiments [Phys. Rev. Lett. 72, 3226 (1994)]. © 1996 The American Physical Society.
Publication Source (Journal or Book title)
Physical Review B - Condensed Matter and Materials Physics
Hu, G., & O’Connell, R. (1996). Hysteretic voltage gap of a multijunction trap. Physical Review B - Condensed Matter and Materials Physics, 54 (3), 1518-1521. https://doi.org/10.1103/PhysRevB.54.1518