Low-temperature transport in epitaxial CoSi2 films
Low-temperature magnetotransport measurements have been performed in ultra-thin fihns of CoSi2/Si(111). The electron phase breaking scattering rates were determined from the low field magnetoresistance for films of thickness between 3.9 and 22.Onm. The temperature independent contribution to the phase breaking rate, which was attributed to spin-spin scattering of the conduction electrons, was found to increase as the film thickness is decreased. The origin of this scattering rate and its importance to the low-temperature transport are discussed. © 1990, Elsevier Science Publishers B.V. (North-Holland). All rights reserved.
Publication Source (Journal or Book title)
Physica B: Condensed Matter
Ditusa, J., Parpia, J., & Phillips, J. (1990). Low-temperature transport in epitaxial CoSi2 films. Physica B: Condensed Matter, 165-166, 863-864. https://doi.org/10.1016/S0921-4526(09)80017-3