Quantum transport in ultrathin CoSi2 epitaxial films
Magnetotransport measurements have been performed in thin cobalt disilicide films epitaxially grown on Si(111) wafers. Films of thickness between 4.0 and 20.0 nm were studied in order to ascertain the important electron scattering rates. A temperature independent contribution to the phase breaking scattering rate was determined and attributed to spin-spin scattering of the conduction electrons which increases as the film thickness is decreased. The origin of this scattering and its importance to the low-temperature electron transport are discussed.
Publication Source (Journal or Book title)
Applied Physics Letters
DiTusa, J., Parpia, J., & Phillips, J. (1990). Quantum transport in ultrathin CoSi2 epitaxial films. Applied Physics Letters, 57 (5), 452-454. https://doi.org/10.1063/1.103663