Electron velocity enhancement by planar-doped barrier source in gaas vertical fet
Experimental evidence of electron velocity enhancement by hot-electron injection into the channel of a GaAs vertical FET has been obtained for the first time. The maximum transconductance and the average electron velocity are 234mS/mm and 6-4 × 107cm/s, which are 1-4 and 1-9 times as large as those of a conventional vertical FET. © 1988, The Institution of Electrical Engineers. All rights reserved.
Publication Source (Journal or Book title)
Yamasaki, K., Daniels-race, T., Wendt, J., Schaff, W., Tasker, P., & Eastman, L. (1988). Electron velocity enhancement by planar-doped barrier source in gaas vertical fet. Electronics Letters, 24 (22), 1383-1384. https://doi.org/10.1049/el:19880946