Title
Determination of electron energy distribution in a GaAs vertical field-effect transistor with hot-electron injection
Document Type
Article
Publication Date
12-1-1989
Abstract
Electron energy distribution on the drain edge of a channel in a GaAs nongated vertical field-effect transistor with hot-electron injection has been probed using hot-electron spectroscopy as a function of current density up to about 105 A/cm2. Electrons rapidly accelerated in an n+-i-p+-i-n+ planar-doped barrier source exhibit nonequilibrium transport through a thin channel (130 nm) with deceleration due to scattering and acceleration due to the electric field. The resulting hot-electron energy distribution, determined by using a planar-doped barrier as an analyzer, diverges from the steady-state one. This divergence dramatically increases with increasing the current density.
Publication Source (Journal or Book title)
Applied Physics Letters
First Page
274
Last Page
276
Recommended Citation
Yamasaki, K., Daniels-Race, T., Lu, S., Schaff, W., Tasker, P., & Eastman, L. (1989). Determination of electron energy distribution in a GaAs vertical field-effect transistor with hot-electron injection. Applied Physics Letters, 54 (3), 274-276. https://doi.org/10.1063/1.100988