Engineering the I-V characteristics of an asymmetric double barrier device with variable period GaAs/AlAs superlattice injectors
This study represents a first-time examination of an asymmetric double barrier structure using variable period superlattice emitters. The layer thickness and period of the superlattices were systematically varied in order to define a unique emitter state in each structure grown. In each case, the emitter state was determined theoretically by calculating the miniband formation in the constituting superlattice. The relationship between the emitter state defined by the superlattice structure parameters and the current-voltage behavior of the diode at 77 K has been investigated here. © 1997 Elsevier Science S.A.
Publication Source (Journal or Book title)
Thin Solid Films
Daniels-Race, T., & Banoo, K. (1997). Engineering the I-V characteristics of an asymmetric double barrier device with variable period GaAs/AlAs superlattice injectors. Thin Solid Films, 300 (1-2), 202-207. https://doi.org/10.1016/S0040-6090(96)09392-3