Polarization sensitivity of optical absorption in tensile strained GaAs/InAlAs double quantum wells
The electric field dependence of the polarization sensitivity of optical absorption in tensile-strained GaAs/InAlAs double quantum wells (DQWs) was investigated theoretically. The coupling effects and electric-field-induced change of eigenstates in various DQW structures were analyzed within the framework of the Bastard envelope function approximation using the transfer matrix method (TMM). The absorption coefficient was calculated with excitonic effects included. The simulation results show that it is possible to change the polarization characteristics in the DQW structures by adjusting the applied electric field.
Publication Source (Journal or Book title)
Superlattices and Microstructures
Meng, Q., Daniels-Race, T., Luo, Z., & McNeil, L. (1999). Polarization sensitivity of optical absorption in tensile strained GaAs/InAlAs double quantum wells. Superlattices and Microstructures, 25 (4), 583-590. https://doi.org/10.1006/spmi.1998.0692