Self-organization of wire-like InAs nanostructures on InP
The initial InAs growth on InP(100) during molecular beam epitaxy has been investigated. The as-grown islands were shaped like nanowires and formed dense arrays over the entire surface in the 3-6 monolayer InAs deposition range. The wires were oriented along the [1̄10] direction. Transmission electron microscopy images confirm that the wires are coherently grown on the substrates. Our results suggest that the coherent wire-shaped island formation may be a possible method to fabricate self-organized InAs nanowires.
Publication Source (Journal or Book title)
Journal of Crystal Growth
Li, H., Zhuang, Q., Kong, X., Wang, Z., & Daniels-Race, T. (1999). Self-organization of wire-like InAs nanostructures on InP. Journal of Crystal Growth, 205 (4), 613-617. https://doi.org/10.1016/S0022-0248(99)00278-X