Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates
We have studied the influence of matrix materials on the self-organization of InAs nanostructures grown on InP substrates by molecular-beam epitaxy. Our results show that InAs quantum dots are formed on InAlGaAs, whereas quantum-wire-like structures are produced on InAlAs and InGaAs. Tuning from vertical anticorrelation in InAs/InAlAs superlattices to vertical correlation in InAs/InGaAs and InAs/InAlGaAs superlattices is observed, which is explained by the size effects in the nanostructure-nanostructure interaction. © 2002 American Institute of Physics.
Publication Source (Journal or Book title)
Applied Physics Letters
Li, H., Daniels-Race, T., & Hasan, M. (2002). Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates. Applied Physics Letters, 80 (8), 1367-1369. https://doi.org/10.1063/1.1452784