Copper(I) Precursors for Chemical Vapor Deposition of Copper Metal

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Several copper(I) complexes are compared as precursors for deposition of Cu metal from the vapor phase in H2carrier gas. The best of these, (hfacJCu1COD) (hfacH = l, l, l, 5, 5, 5-hexafluoro-2, 4-pentanedione; COD = 1, 5-cyclooctadiene), yields films of low resistivity (3-4 µΩ cm) and high purity (96%, by Auger electron spectroscopy); these are similar to films produced by H2reduction of the more familiar copper(II) complex Cu(hfac)2. (Hfac)CuI(1, 3-butadiene) and [(hfac)CuI]2(µ-l, 3, 5, 7-cyclooctatetraene) produce films of only slightly higher resistivity (4-6 µΩ cm), but films from CpCuI(PR3) (R = CH2CH3, OCH3, OCH2CH3) are noticeably inferior (ρ 10 µΩ cm). (hfac)CuI(COD) has also been studied by X-ray crystallography. (Hfac)CuICOD), monoclinic, space group P21/c; a = 10.042 (2), b = 9.878 (2), c = 15.756 (3) Å β = 108.64 (2)° Z = 4; R = 0.044 (Rw= 0.051) for 1790 reflections (I 3σ(D) and 233 parameters. The structure contains a 2-fold disorder in the Cu atom position, corresponding to n2and n4bonding modes of the COD ligand. © 1992, American Chemical Society. All rights reserved.

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Chemistry of Materials

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