Comparison of copper CVD using Cu(fod)2 and Cu(hfac)2 reduction
We have measured the growth rate and film properties for the chemical vapor deposition of copper thin films using H2 reduction of Cu(fod)2 (H(fod) = 188.8.131.52.8.8.8-heptafluoro-2,2-dimethyl-3,5-octanedione]. The results are directly compared to deposition using Cu(hfac)2 [H(hfac) = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione]. Higher growth rates are obtained using Cu(fod)2, in part because of differences in reaction order between the two compounds. However, both compounds exhibit significant cluster formation during film nucleation, which leads to residual porosity and film resistivities above 2 μΩ-cm. © 1999 Materials Research Society.
Publication Source (Journal or Book title)
Materials Research Society Symposium - Proceedings
Boey, J., Griffin, G., Maverick, A., & Fan, H. (1999). Comparison of copper CVD using Cu(fod)2 and Cu(hfac)2 reduction. Materials Research Society Symposium - Proceedings, 564, 251-255. https://doi.org/10.1557/proc-564-251