"Graphene nanomeshes: Onset of conduction band gaps" by Kenneth Lopata, Ryan Thorpe et al.

Faculty Publications

Title

Graphene nanomeshes: Onset of conduction band gaps

Authors

Kenneth Lopata, University of California, Los Angeles
Ryan Thorpe, University of California, Los Angeles
Shlomi Pistinner, University of California, Los Angeles
Xiangfeng Duan, University of California, Los Angeles
Daniel Neuhauser, University of California, Los Angeles

Document Type

Article

Publication Date

10-8-2010

Abstract

Hückel simulations of large finite graphene nanomeshes with lithographically induced holes show sizable band gaps in the conduction while the optical absorption has generally the same semi-metal character as pure graphene. There is a strong dependence of the band gap on the angle between the graphene axis and the periodic hole axis. Simple modification of on-site energies shows that substituents on the edges of the holes could also have a significant effect. These simulations show that graphene nanomeshes, which have been recently fabricated, are potentially useful tunable materials for electronic applications. © 2010 Elsevier B.V. All rights reserved.

Publication Source (Journal or Book title)

Chemical Physics Letters

First Page

334

Last Page

337

Recommended Citation

Lopata, K., Thorpe, R., Pistinner, S., Duan, X., & Neuhauser, D. (2010). Graphene nanomeshes: Onset of conduction band gaps. Chemical Physics Letters, 498 (4-6), 334-337. https://doi.org/10.1016/j.cplett.2010.08.086

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