Raman microprobe determination of local crystal orientation in laser annealed silicon
In this letter we discuss the application of polarization selective Raman microprobe spectroscopy to the detailed, nondestructive analysis of the local crystal orientation of a polycrystalline silicon sample grown over SiO 2 pads and laser annealed. Intensity measurements taken as a function of input polarization angle are fit to an expression derived from the Raman scattering selection rules to calculate the angles by which the crystal structure is twisted within the original substrate plane, as well as the degree of tipping of the crystal plane away from the plane of the Si substrate.
Publication Source (Journal or Book title)
Applied Physics Letters
Hopkins, J., Farrow, L., & Fisanick, G. (1984). Raman microprobe determination of local crystal orientation in laser annealed silicon. Applied Physics Letters, 44 (5), 535-537. https://doi.org/10.1063/1.94829