Title

LOCAL CRYSTAL ORIENTATION IN LASER ANNEALED SILICON USING A RAMAN MICROPROBE.

Document Type

Conference Proceeding

Publication Date

12-1-1984

Abstract

The authors discuss the application of polarization selective Raman microprobe spectroscopy to the detailed, non-destructive analysis of the local crystal orientation of a polysilicon sample grown over SiO//2 pads and laser annealed. Intensity measurements taken as a function of input polarization angle are fit to an expression derived from the Raman scattering selection rules to calculate the angles by which the crystal structure is twisted within the original substrate plane.

Publication Source (Journal or Book title)

Materials Research Society Symposia Proceedings

First Page

231

Last Page

236

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