Title
LOCAL CRYSTAL ORIENTATION IN LASER ANNEALED SILICON USING A RAMAN MICROPROBE.
Document Type
Conference Proceeding
Publication Date
12-1-1984
Abstract
The authors discuss the application of polarization selective Raman microprobe spectroscopy to the detailed, non-destructive analysis of the local crystal orientation of a polysilicon sample grown over SiO//2 pads and laser annealed. Intensity measurements taken as a function of input polarization angle are fit to an expression derived from the Raman scattering selection rules to calculate the angles by which the crystal structure is twisted within the original substrate plane.
Publication Source (Journal or Book title)
Materials Research Society Symposia Proceedings
First Page
231
Last Page
236
Recommended Citation
Farrow, L., Hopkins, J., & Fisanick, G. (1984). LOCAL CRYSTAL ORIENTATION IN LASER ANNEALED SILICON USING A RAMAN MICROPROBE.. Materials Research Society Symposia Proceedings, 29, 231-236. Retrieved from https://repository.lsu.edu/chemistry_pubs/535