Title

Gateless AlGaN/GaN HEMT response to block co-polymers

Document Type

Article

Publication Date

5-1-2004

Abstract

Gateless AlGaN/GaN high electron mobility transistor (HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing. © 2003 Elsevier Ltd. All rights reserved.

Publication Source (Journal or Book title)

Solid-State Electronics

First Page

851

Last Page

854

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