Gateless AlGaN/GaN HEMT response to block co-polymers
Gateless AlGaN/GaN high electron mobility transistor(HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.
Publication Source (Journal or Book title)
Proceedings - Electrochemical Society
Kang, B., Louche, G., Duran, R., Gnanou, Y., Pearton, S., & Ren, F. (2004). Gateless AlGaN/GaN HEMT response to block co-polymers. Proceedings - Electrochemical Society, 2, 39-45. Retrieved from https://digitalcommons.lsu.edu/chemistry_pubs/248